Fast formation of conductive material by simultaneous chemical process for infilling through-silicon via

Jin Kawakita, Toyohiro Chikyow

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

It is necessary to develop a fast and inexpensive fabrication process of vertical electric wiring by through-silicon via (TSV) technology for advanced three-dimensional semiconductor devices. In this research, a fast-forming conductive composite was successfully developed by simultaneous deposition of conductive organic polymer (polypyrrole) and metal (silver) from the liquid phase, accelerated by photoirradiation. The growth rate of the composite was 38nm·s -1, which is more than 10 times higher than that of copper by conventional plating. The electric conductivity of the composite was 2.1 × 10 4 Ω -1·cm -1, which is on the same level as general metal conductors. In addition, the effects of reaction conditions on the growth rate and the conductivity of the composites were revealed. From these results, the infilling time of the TSV was expected to shorten from the present 2-10 h to 5-10 m.

Original languageEnglish
Article number06FG11
JournalJapanese journal of applied physics
Volume51
Issue number6 PART 2
DOIs
Publication statusPublished - 2012 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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