Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

Yuta Saito; Yuji Sutou; Junichi Koike

doi:10.1063/1.4726107

Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

Yuta Saito, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge _46.55Te _46.55Si _6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

Original language	English
Article number	231606
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726107
Publication status	Published - 2012 Jun 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.",

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note = "Funding Information: This work was supported by a Grant-in-Aid for JSPS fellows from the Ministry of Education, Culture, Sports, Science and Technology, Japan (10J05810), and partially supported by KAKENHI (23360297).",

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AU - Saito, Yuta

AU - Sutou, Yuji

AU - Koike, Junichi

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Y1 - 2012/6/4

N2 - Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

AB - Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

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Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

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