Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

Yuta Saito; Yuji Sutou; Junichi Koike

doi:10.1063/1.4726107

Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

Yuta Saito, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge _46.55Te _46.55Si _6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

Original language	English
Article number	231606
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726107
Publication status	Published - 2012 Jun 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{26a8abafd3e24ed19fca11e8770430e6,

title = "Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film",

abstract = "Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.",

author = "Yuta Saito and Yuji Sutou and Junichi Koike",

year = "2012",

month = jun,

day = "4",

doi = "10.1063/1.4726107",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

AU - Saito, Yuta

AU - Sutou, Yuji

AU - Koike, Junichi

PY - 2012/6/4

Y1 - 2012/6/4

N2 - Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

AB - Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84862120758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862120758&partnerID=8YFLogxK

U2 - 10.1063/1.4726107

DO - 10.1063/1.4726107

M3 - Article

AN - SCOPUS:84862120758

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231606

ER -