Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures

Victor Ryzhii, Maxim Ryzhii, Petr P. Maltsev, Valerij E. Karasik, Vladimir Mitin, Michael S. Shur, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

Abstract

We propose the far-infrared and terahertz emitting diodes (FIR-EDs and THz-EDs) based on the graphene-layer/black phosphorus (GL/b-P) and graphene-layer/MoS2 (GL/MoS2) heterostructures with the lateral hole and vertical electron injection and develop their device models. In these EDs, the GL serves as an active region emitting the FIR and THz photons. Depending on the material of the electron injector, the carriers in the GL can be either cooled or heated dictated by the interplay of the vertical electron injection and optical phonon recombination. The proposed EDs based on GL/b-P heterostructures can be efficient sources of the FIP and THz radiation operating at room temperature.

Original languageEnglish
Pages (from-to)24136-24151
Number of pages16
JournalOptics Express
Volume28
Issue number16
DOIs
Publication statusPublished - 2020 Aug 3

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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