Abstract
Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.
| Original language | English |
|---|---|
| Pages (from-to) | 2391-2393 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 53 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 1988 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Yamada-Kaneta, H., Ogawa, T., Muraishi, S., Kaneta, C., & Wada, K. (1988). Far-infrared absorption by oxygen in silicon. Applied Physics Letters, 53(24), 2391-2393. https://doi.org/10.1063/1.100240