Far-infrared absorption by oxygen in silicon

Hiroshi Yamada-Kaneta, Tsutomu Ogawa, Shuichi Muraishi, Chioko Kaneta, Kunihiko Wada

Research output: Contribution to journalArticle

Abstract

Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.

Original languageEnglish
Pages (from-to)2391-2393
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number24
DOIs
Publication statusPublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Far-infrared absorption by oxygen in silicon'. Together they form a unique fingerprint.

  • Cite this

    Yamada-Kaneta, H., Ogawa, T., Muraishi, S., Kaneta, C., & Wada, K. (1988). Far-infrared absorption by oxygen in silicon. Applied Physics Letters, 53(24), 2391-2393. https://doi.org/10.1063/1.100240