Far-infrared absorption by oxygen in silicon

Hiroshi Yamada-Kaneta; Tsutomu Ogawa; Shuichi Muraishi; Chioko Kaneta; Kunihiko Wada

doi:10.1063/1.100240

Far-infrared absorption by oxygen in silicon

Hiroshi Yamada-Kaneta, Tsutomu Ogawa, Shuichi Muraishi, Chioko Kaneta, Kunihiko Wada

Research output: Contribution to journal › Article › peer-review

Abstract

Far-infrared absorption measurements in the 14-50 cm^- ¹ range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm^-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm^-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm ^-1 hc.

Original language	English
Pages (from-to)	2391-2393
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	24
DOIs	https://doi.org/10.1063/1.100240
Publication status	Published - 1988
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100240

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title = "Far-infrared absorption by oxygen in silicon",

abstract = "Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.",

author = "Hiroshi Yamada-Kaneta and Tsutomu Ogawa and Shuichi Muraishi and Chioko Kaneta and Kunihiko Wada",

year = "1988",

doi = "10.1063/1.100240",

language = "English",

volume = "53",

pages = "2391--2393",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Far-infrared absorption by oxygen in silicon

AU - Yamada-Kaneta, Hiroshi

AU - Ogawa, Tsutomu

AU - Muraishi, Shuichi

AU - Kaneta, Chioko

AU - Wada, Kunihiko

PY - 1988

Y1 - 1988

N2 - Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.

AB - Far-infrared absorption measurements in the 14-50 cm- 1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2-35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm-1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm-1 has been found, which is considered to be a sideband caused by a coupling between the off-center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm -1 hc.

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Far-infrared absorption by oxygen in silicon

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