Fano resonance in Raman scattering of graphene

Duhee Yoon, Dongchan Jeong, Hu Jong Lee, Riichiro Saito, Young Woo Son, Hyun Cheol Lee, Hyeonsik Cheong

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

Original languageEnglish
Pages (from-to)373-378
Number of pages6
Publication statusPublished - 2013 Sep

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)


Dive into the research topics of 'Fano resonance in Raman scattering of graphene'. Together they form a unique fingerprint.

Cite this