Failure analysis of a SiC MOS capacitor with a poly-Si gate electrode

Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The failure mechanism of a SiC metal-oxide-semiconductor capacitor with a poly-Si gate electrode was investigated by time-dependent dielectric breakdown testing under a 200-nA constant current stress. The capacitor exhibited both hard and soft breakdowns. After dielectric breakdown in both cases, adjacent concaves were observed on the capacitor with a field-emission scanning electron microscope. Additional optical beam-induced resistance changes and photo-emission analysis of a capacitor after hard-breakdown located a failure point on the periphery of a group of adjacent concaves. Cross-sectional scanning transmission electron microscope observation revealed that a narrow, vertical defect had formed at this point on the SiC substrate.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages485-488
Number of pages4
ISBN (Print)9783035710427
DOIs
Publication statusPublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: 2015 Oct 42015 Oct 9

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period15/10/415/10/9

Keywords

  • MOS
  • Photo-emission
  • Poly-Si
  • Silicon carbide
  • TDDB

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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