TY - JOUR
T1 - Facile synthesis of colloidal InAs nanocrystals using triphenylarsine as an arsenic source
AU - Uesugi, Hideo
AU - Kita, Masao
AU - Omata, Takahisa
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research (B) (No. 23360287 ) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2014 Elsevier B.V.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/11/1
Y1 - 2014/11/1
N2 - Colloidal InAs nanocrystals (NCs) were synthesized by heating an organometallic solution, containing triphenylarsine as the arsenic source. Because the triphenylarsine is quite stable in ambient conditions at room temperature, the reaction is easy to handle compared with conventional synthesis using tris(trimethylsilyl)arsine. The average size of InAs NCs obtained was varied in the range from 12 nm to 20 nm according to the reaction time, and their optical gap was larger than that of the bulk InAs because of quantum size effect. The reaction mechanism of InAs NCs formation was discussed based on the infrared absorption spectra of reaction solutions, and formation of a reaction intermediate was suggested during the long induction period, ≈80 min, of InAs NCs formation.
AB - Colloidal InAs nanocrystals (NCs) were synthesized by heating an organometallic solution, containing triphenylarsine as the arsenic source. Because the triphenylarsine is quite stable in ambient conditions at room temperature, the reaction is easy to handle compared with conventional synthesis using tris(trimethylsilyl)arsine. The average size of InAs NCs obtained was varied in the range from 12 nm to 20 nm according to the reaction time, and their optical gap was larger than that of the bulk InAs because of quantum size effect. The reaction mechanism of InAs NCs formation was discussed based on the infrared absorption spectra of reaction solutions, and formation of a reaction intermediate was suggested during the long induction period, ≈80 min, of InAs NCs formation.
KW - A1. Nanostructures
KW - B1. Inorganic compounds
KW - B1. Nanomaterials
KW - B2. Semiconducting III-V materials
KW - B2. Semiconducting indium compounds
KW - B3. Solar cells
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U2 - 10.1016/j.jcrysgro.2014.07.037
DO - 10.1016/j.jcrysgro.2014.07.037
M3 - Article
AN - SCOPUS:84907814313
VL - 405
SP - 39
EP - 43
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -