Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals

Yutaka Fujimoto; Takayuki Yanagida; Yoshisuke Futami

doi:10.1109/NSSMIC.2013.6829629

Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals

Yutaka Fujimoto, Takayuki Yanagida, Yoshisuke Futami

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Dosimetric, and scintillation properties of undoped sapphire (Al ₂O₃) single crystal fabricated by different methods of the Czochralski (Cz) and the Bridgman were investigated. In X-ray induced radioluminescence spectra, they showed emission peaks at 240 and 300 nm due to exciton and F⁺ centers, respectively. Scintillation decay times of F⁺ center was fast around few ns. As a dosimetric property, from 0.01 to 2 Gy X-ray was exposed to them and they exhibited a thermally stimulated luminescence (TSL) with a good linearity. The glow peaks of them were similar, 150, 250, and 325 °C. In TSL, the Bridgeman sample represented only F-center emission while the Cz sample showed F at 400 nm and F⁺ at 300 nm centers emission.

Original language	English
Title of host publication	2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479905348
DOIs	https://doi.org/10.1109/NSSMIC.2013.6829629
Publication status	Published - 2013 Jan 1
Externally published	Yes
Event	2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013 - Seoul, Korea, Republic of Duration: 2013 Oct 27 → 2013 Nov 2

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
ISSN (Print)	1095-7863

Other

Other	2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013
Country	Korea, Republic of
City	Seoul
Period	13/10/27 → 13/11/2

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

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Fujimoto, Y., Yanagida, T., & Futami, Y. (2013). Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals. In 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013 [6829629] (IEEE Nuclear Science Symposium Conference Record). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NSSMIC.2013.6829629

Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals. / Fujimoto, Yutaka; Yanagida, Takayuki; Futami, Yoshisuke.

2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. 6829629 (IEEE Nuclear Science Symposium Conference Record).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujimoto, Y, Yanagida, T & Futami, Y 2013, Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals. in 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013., 6829629, IEEE Nuclear Science Symposium Conference Record, Institute of Electrical and Electronics Engineers Inc., 2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013, Seoul, Korea, Republic of, 13/10/27. https://doi.org/10.1109/NSSMIC.2013.6829629

Fujimoto Y, Yanagida T, Futami Y. Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals. In 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. 6829629. (IEEE Nuclear Science Symposium Conference Record). https://doi.org/10.1109/NSSMIC.2013.6829629

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title = "Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals",

abstract = "Dosimetric, and scintillation properties of undoped sapphire (Al 2O3) single crystal fabricated by different methods of the Czochralski (Cz) and the Bridgman were investigated. In X-ray induced radioluminescence spectra, they showed emission peaks at 240 and 300 nm due to exciton and F+ centers, respectively. Scintillation decay times of F+ center was fast around few ns. As a dosimetric property, from 0.01 to 2 Gy X-ray was exposed to them and they exhibited a thermally stimulated luminescence (TSL) with a good linearity. The glow peaks of them were similar, 150, 250, and 325 °C. In TSL, the Bridgeman sample represented only F-center emission while the Cz sample showed F at 400 nm and F+ at 300 nm centers emission.",

author = "Yutaka Fujimoto and Takayuki Yanagida and Yoshisuke Futami",

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doi = "10.1109/NSSMIC.2013.6829629",

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N2 - Dosimetric, and scintillation properties of undoped sapphire (Al 2O3) single crystal fabricated by different methods of the Czochralski (Cz) and the Bridgman were investigated. In X-ray induced radioluminescence spectra, they showed emission peaks at 240 and 300 nm due to exciton and F+ centers, respectively. Scintillation decay times of F+ center was fast around few ns. As a dosimetric property, from 0.01 to 2 Gy X-ray was exposed to them and they exhibited a thermally stimulated luminescence (TSL) with a good linearity. The glow peaks of them were similar, 150, 250, and 325 °C. In TSL, the Bridgeman sample represented only F-center emission while the Cz sample showed F at 400 nm and F+ at 300 nm centers emission.

AB - Dosimetric, and scintillation properties of undoped sapphire (Al 2O3) single crystal fabricated by different methods of the Czochralski (Cz) and the Bridgman were investigated. In X-ray induced radioluminescence spectra, they showed emission peaks at 240 and 300 nm due to exciton and F+ centers, respectively. Scintillation decay times of F+ center was fast around few ns. As a dosimetric property, from 0.01 to 2 Gy X-ray was exposed to them and they exhibited a thermally stimulated luminescence (TSL) with a good linearity. The glow peaks of them were similar, 150, 250, and 325 °C. In TSL, the Bridgeman sample represented only F-center emission while the Cz sample showed F at 400 nm and F+ at 300 nm centers emission.

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Fabrication process dependency of dosimetric and scintillation properties of sapphire crystals

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