Fabrication of Zn-doped Cu(In, Ga)Se2 thin film solar cells prepared by Zn diffusion from the gas phase using dimethylzinc

Atsushi Miyama, Xiaoming Dou, Toshihiro Yasuniwa, Akihisa Umezawa, Hisayuki Nakanishi, Shigefusa F. Chichibu, Mutsumi Sugiyama

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Cu(In, Ga)Se2 (CIGS) solar cells were fabricated by thermal diffusion of Zn into p-type CIGS films using dimethylzinc [(CH3) 2Zn: DMZn] vapor, in order to form CIGS pn-homojunction. This method requires no additional processing equipment, because diffusion can be carried out subsequent to the CIGS growth. The average conversion efficiency of the CIGS solar cells consisting of n-type MgZnO transparent conducting oxide (TCO) film and n-CIGS:Zn/p-CIGS structure (4%) was improved by a factor of two in comparison with the case for undoped CIGS absorbing layer (2%). The appropriate flow time of DMZn was 3 s, from which the diffusion depth is estimated as about 150 nm. The method is highly advantageous for development of low-cost solar modules.

Original languageEnglish
Pages (from-to)1213-1216
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5
Publication statusPublished - 2009 Sep 30
Event16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany
Duration: 2008 Sep 152008 Sep 19

ASJC Scopus subject areas

  • Condensed Matter Physics

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