Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

C. X. Wang, G. W. Yang, T. C. Zhang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao, G. T. Zou

Research output: Contribution to journalArticlepeer-review

50 Citations (Scopus)

Abstract

ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions.

Original languageEnglish
Pages (from-to)1548-1552
Number of pages5
JournalDiamond and Related Materials
Volume12
Issue number9
DOIs
Publication statusPublished - 2003 Sep

Keywords

  • Diamond film
  • Diode
  • Transparent
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film'. Together they form a unique fingerprint.

Cite this