Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

C. X. Wang; G. W. Yang; T. C. Zhang; H. W. Liu; Y. H. Han; J. F. Luo; C. X. Gao; G. T. Zou

doi:10.1016/S0925-9635(03)00237-1

Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

C. X. Wang, G. W. Yang, T. C. Zhang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao, G. T. Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions.

Original language	English
Pages (from-to)	1548-1552
Number of pages	5
Journal	Diamond and Related Materials
Volume	12
Issue number	9
DOIs	https://doi.org/10.1016/S0925-9635(03)00237-1
Publication status	Published - 2003 Sep

Keywords

Diamond film
Diode
Transparent
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(03)00237-1

Cite this

@article{8609830129854c1185e891291e1de398,

title = "Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film",

abstract = "ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions.",

keywords = "Diamond film, Diode, Transparent, ZnO",

author = "Wang, {C. X.} and Yang, {G. W.} and Zhang, {T. C.} and Liu, {H. W.} and Han, {Y. H.} and Luo, {J. F.} and Gao, {C. X.} and Zou, {G. T.}",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 69576012 and the Education Ministry of China. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2003",

month = sep,

doi = "10.1016/S0925-9635(03)00237-1",

language = "English",

volume = "12",

pages = "1548--1552",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "9",

}

TY - JOUR

T1 - Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

AU - Wang, C. X.

AU - Yang, G. W.

AU - Zhang, T. C.

AU - Liu, H. W.

AU - Han, Y. H.

AU - Luo, J. F.

AU - Gao, C. X.

AU - Zou, G. T.

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 69576012 and the Education Ministry of China. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2003/9

Y1 - 2003/9

N2 - ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions.

AB - ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions.

KW - Diamond film

KW - Diode

KW - Transparent

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=0142153821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142153821&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(03)00237-1

DO - 10.1016/S0925-9635(03)00237-1

M3 - Article

AN - SCOPUS:0142153821

VL - 12

SP - 1548

EP - 1552

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 9

ER -

Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

Abstract

Keywords

ASJC Scopus subject areas

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