Fabrication of transparent conductive W-doped SnO2 thin films on glass substrates using anatase TiO2 seed layers

Shoichiro Nakao, Naoomi Yamada, Taro Hitosugi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)


    Pulsed laser deposition was used to grow W-doped SnO2 (WTO) thin films on glass substrates. By using 10-nm-thick polycrystalline anatase TiO2 seed layers formed on the glass substrates, the lowest resistivity of 3.5 × 10-4 Ωcm, with a mobility of 84 cm2V-1s-1 and a carrier concentration of 2.1 × 1020 cm-3, was obtained at a W concentration of 1.5 at.%. An optimized WTO film with a sheet resistance of 9.1 Ω/□ exhibited an optical transmittance of over 70% at wavelengths ranging from 400 to 1950 nm. These transport and optical properties are comparable to those of Ta-doped SnO2.

    Original languageEnglish
    Pages (from-to)543-545
    Number of pages3
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Issue number2
    Publication statusPublished - 2011 Feb


    • Pulsed laser deposition
    • Seed layer
    • Transparent conductive oxide
    • W-doped SnO

    ASJC Scopus subject areas

    • Condensed Matter Physics


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