Fabrication of Ti-nanowires in sapphire single crystals

Atsutomo Nakamura, Katsuyuki Matsunaga, Takahisa Yamamoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    We report electrical conductivity of Ti-nanowires in sapphire fabricated by utilizing lattice dislocations. We evaporated metallic Ti on a sapphire plate containing high density of uniaxial dislocations, and annealed the plate at high temperatures. As a result, it was found that Ti atoms intensely segregated along the dislocations within about 5 nm in diameter, indicating the formation of Ti-nanowires inside sapphire. Furthermore, the nanowires were confirmed to have significant electrical conductivity even in sapphire insulator.

    Original languageEnglish
    Pages (from-to)38-42
    Number of pages5
    JournalApplied Surface Science
    Volume241
    Issue number1-2 SPEC. ISS.
    DOIs
    Publication statusPublished - 2005 Feb 28

    Keywords

    • Dislocations
    • Electric conductivity
    • Quantum wires
    • Sapphire
    • Scanning probe microscope (SPM)

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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