Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Naokatsu Ikegami, Takashi Yoshida, Akira Kojima, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n++-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n++-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.

Original languageEnglish
Title of host publication2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages578-582
Number of pages5
ISBN (Electronic)9781509019472
DOIs
Publication statusPublished - 2016 Nov 28
Event11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016 - Sendai, Japan
Duration: 2016 Apr 172016 Apr 20

Publication series

Name2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016

Other

Other11th IEEE Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016
CountryJapan
CitySendai
Period16/4/1716/4/20

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials

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