Fabrication of stable n-type thin-film transistor with Cs encapsulated single-walled carbon nanotubes

Toshiaki Kato, Rikizo Hatakeyama, Yosuke Osanai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Stable n-type thin film transistors (TFTs) are fabricated with Cs encapsulated single-walled carbon nanotubes (Cs@SWNTs). The transport property of SWNTs-TFTs clearly changes from p- to n-type characteristic after the Cs plasma irradiation. Based on the systematic investigations, it is revealed that there is an optimum ion energy for the effective Cs encapsulation, which is around 50 eV. Furthermore, it is also found that the n-type feature is stable even in water and high temperature (≤400 °C) conditions. This very stable n-type TFTs is important for the practical application of SWNTs-based thin film electronics.

Original languageEnglish
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages996-999
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: 2011 Aug 152011 Aug 19

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period11/8/1511/8/19

Keywords

  • Plasma ion irradiation
  • Single-walled carbon nanotubes
  • Thin film transistors

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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