Fabrication of silicon quantum wires and dots

Yoshihiko Hirai, Kiyoshi Morimoto, Masaaki Niwa, Koichro Yuki, Juro Yasui

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.

Original languageEnglish
Pages (from-to)1426-1430
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE77-C
Issue number9
Publication statusPublished - 1994 Sep

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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