Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate

Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Baoping Zhang, Yusaburo Segawa, Kazuo Nakajima

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5 Citations (Scopus)


We report on the fabrication of a homogeneous SiGe-on-insulator as a substrate for strained Si-on-insulator (SOI) metaloxide-semiconductor field-effect-transistors. The fabrication process includes the growth of a thin Ge film on a commercially available SOI substrate at 100°C using a molecular beam epitaxy system, the formation of a SiO2 cap layer by radio-frequency sputtering, and rapid thermal annealing (RTA) in an Ar atmosphere. After RTA at an appropriate temperature, the SiGe-on-insulator with a laterally homogeneous Si fraction was successfully obtained by the formation of epitaxial SiGe on a thin SOI as a seed and interdiffusion of Ge and Si atoms. However, inhomogeneous SiGe films were obtained when the annealing temperature was very high. The conditions for the realization of SiGe with a homogeneous Si fraction were found to be closely related to the phase diagram of the Si-Ge binary alloy.

Original languageEnglish
Pages (from-to)L232-L234
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number3 A
Publication statusPublished - 2003 Mar 1


  • Phase diagram
  • RTA
  • SGOI
  • SOI
  • SiGe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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