Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Kazuo Nakajima, Baoping Zhang, Yusaburo Segawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available SOI substrate, formation of a SiO 2 protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis.

Original languageEnglish
Pages (from-to)95-98
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Phase diagram
  • RTA
  • SGOI
  • SOI
  • SiGe

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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