Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kentaro Kutsukake; Noritaka Usami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Kazuo Nakajima; Baoping Zhang; Yusaburo Segawa

doi:10.1016/j.apsusc.2003.08.100

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Kazuo Nakajima, Baoping Zhang, Yusaburo Segawa

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available SOI substrate, formation of a SiO ₂ protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis.

Original language	English
Pages (from-to)	95-98
Number of pages	4
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.100
Publication status	Published - 2004 Mar 15

Keywords

Phase diagram
RTA
SGOI
SOI
SiGe

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2003.08.100

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@article{324f102c5ecc40fda6464e2894463cea,

title = "Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate",

abstract = " We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available SOI substrate, formation of a SiO 2 protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis.",

keywords = "Phase diagram, RTA, SGOI, SOI, SiGe",

author = "Kentaro Kutsukake and Noritaka Usami and Kozo Fujiwara and Toru Ujihara and Gen Sazaki and Kazuo Nakajima and Baoping Zhang and Yusaburo Segawa",

note = "Funding Information: This work was in part supported by Industrial Technology Research Grant Program from NEDO of Japan and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture N.U. acknowledges the support of SCAT.",

year = "2004",

month = mar,

day = "15",

doi = "10.1016/j.apsusc.2003.08.100",

language = "English",

volume = "224",

pages = "95--98",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

AU - Kutsukake, Kentaro

AU - Usami, Noritaka

AU - Fujiwara, Kozo

AU - Ujihara, Toru

AU - Sazaki, Gen

AU - Nakajima, Kazuo

AU - Zhang, Baoping

AU - Segawa, Yusaburo

N1 - Funding Information: This work was in part supported by Industrial Technology Research Grant Program from NEDO of Japan and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture N.U. acknowledges the support of SCAT.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available SOI substrate, formation of a SiO 2 protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis.

AB - We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available SOI substrate, formation of a SiO 2 protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis.

KW - Phase diagram

KW - RTA

KW - SGOI

KW - SOI

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=1142304537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1142304537&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2003.08.100

DO - 10.1016/j.apsusc.2003.08.100

M3 - Article

AN - SCOPUS:1142304537

SN - 0169-4332

VL - 224

SP - 95

EP - 98

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Abstract

Keywords

ASJC Scopus subject areas

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