TY - JOUR
T1 - Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures
AU - Usami, N.
AU - Azuma, Y.
AU - Ujihara, T.
AU - Sazaki, G.
AU - Fujiwara, K.
AU - Murakami, Y.
AU - Nakajima, K.
N1 - Funding Information:
The authors would like to thank S. Kodama, I. Yonenaga, H. Tezuka, and Y. Shiraki for fruitful discussions. This work was supported in part by the Grants-in-Aid for Scientific Research [No.13555086 and No. 13025205] from the Ministry of Education, Culture, Sports, Science, and Technology. N. Usami acknowledges the support of the Support Center for Advanced Telecommunication Technology Research (SCAT).
PY - 2002/2/14
Y1 - 2002/2/14
N2 - SiGe bulk crystal was grown by the multicomponent zone-melting method equipped with an in situ monitoring system of the position and the temperature at the crystal-solution interface. By utilizing the in situ monitoring system, an attempt was made to control the interface position at a fixed position during growth by balancing the growth rate and the pulling rate of the crystal. This led to realization of SiGe bulk crystal with Ge composition of 0.86±0.004 over 22 mm in length. However, as growth proceeds, development of small angle boundaries was evidenced by X-ray characterizations. This polycrystallization was found to be accompanied with appearance of deep-level emission in photoluminescence spectra. A preliminary result to grow SiGe with intermediate composition, which is important for Si-based heterostructures, was also performed.
AB - SiGe bulk crystal was grown by the multicomponent zone-melting method equipped with an in situ monitoring system of the position and the temperature at the crystal-solution interface. By utilizing the in situ monitoring system, an attempt was made to control the interface position at a fixed position during growth by balancing the growth rate and the pulling rate of the crystal. This led to realization of SiGe bulk crystal with Ge composition of 0.86±0.004 over 22 mm in length. However, as growth proceeds, development of small angle boundaries was evidenced by X-ray characterizations. This polycrystallization was found to be accompanied with appearance of deep-level emission in photoluminescence spectra. A preliminary result to grow SiGe with intermediate composition, which is important for Si-based heterostructures, was also performed.
KW - Bulk crystal
KW - In situ monitoring
KW - Multicomponent zone-melting method
KW - SiGe
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U2 - 10.1016/S0921-5107(01)00775-9
DO - 10.1016/S0921-5107(01)00775-9
M3 - Article
AN - SCOPUS:0037074797
VL - 89
SP - 364
EP - 367
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -