Fabrication of Si single-electron transistors having double SiO2 barriers

Yuhei Ito, Tsuyoshi Hatano, Anri Nakajima, Shin Yokoyama

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We fabricated Si single-electron transistors (SETs) having double SiO 2 barriers and a polycrystalline Si (poly-Si) dot. The fabrication method of this device is completely compatible with the complementary metal-oxide-semiconductor technology, and the position of the poly-Si dot is self-aligned between the source and drain regions. The device exhibits drain current (Id) oscillation against gate voltage. From the dot size dependence of the electrical characteristics, the Id oscillation is considered to be due to the Coulomb blockade effect caused by poly-Si grains in the poly-Si dot. The self-alignment of the poly-Si dot in the fabrication process also means that the SET is promising for practical use.

Original languageEnglish
Pages (from-to)4617-4619
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number24
DOIs
Publication statusPublished - 2002 Jun 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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