Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing

Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki, Kiyoshi Okuyama, Tetsuo Tabei, Kensaku Ohkura, Yasuhisa Kayaba, Yuuichirou Tanushi, Yoshiteru Amemiya, Yoshinori Cho, Tomomi Monzen, Yuji Murakami, Akio KurodaAnri Nakajima

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We fabricated a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) with a Si3N4 gate insulator for highly sensitive detection of target biomolecules. The fabricated SiNW FET acted as an ion-sensitive FET that could detect the charge density in solutions flowing along the gate surface by responding to the pH of the solutions. The SiNW FET also detected charged protein molecules in solution, suggesting that our device can be used in highly sensitive, label-free biosensing.

Original languageEnglish
Pages (from-to)06FJ041-06FJ044
JournalJapanese journal of applied physics
Volume48
Issue number6 PART 2
DOIs
Publication statusPublished - 2009 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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