Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing

Takashi Kudo; Toshihiro Kasama; Takeshi Ikeda; Yumehiro Hata; Shiho Tokonami; Shin Yokoyama; Takamaro Kikkawa; Hideo Sunami; Tomohiro Ishikawa; Masato Suzuki; Kiyoshi Okuyama; Tetsuo Tabei; Kensaku Ohkura; Yasuhisa Kayaba; Yuuichirou Tanushi; Yoshiteru Amemiya; Yoshinori Cho; Tomomi Monzen; Yuji Murakami; Akio Kuroda; Anri Nakajima

doi:10.1143/JJAP.48.06FJ04

Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing

Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki, Kiyoshi Okuyama, Tetsuo Tabei, Kensaku Ohkura, Yasuhisa Kayaba, Yuuichirou Tanushi, Yoshiteru Amemiya, Yoshinori Cho, Tomomi Monzen, Yuji Murakami, Akio KurodaAnri Nakajima

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We fabricated a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) with a Si₃N₄ gate insulator for highly sensitive detection of target biomolecules. The fabricated SiNW FET acted as an ion-sensitive FET that could detect the charge density in solutions flowing along the gate surface by responding to the pH of the solutions. The SiNW FET also detected charged protein molecules in solution, suggesting that our device can be used in highly sensitive, label-free biosensing.

Original language	English
Pages (from-to)	06FJ041-06FJ044
Journal	Japanese journal of applied physics
Volume	48
Issue number	6 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.06FJ04
Publication status	Published - 2009 Jun
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Kudo, T., Kasama, T., Ikeda, T., Hata, Y., Tokonami, S., Yokoyama, S., Kikkawa, T., Sunami, H., Ishikawa, T., Suzuki, M., Okuyama, K., Tabei, T., Ohkura, K., Kayaba, Y., Tanushi, Y., Amemiya, Y., Cho, Y., Monzen, T., Murakami, Y., ... Nakajima, A. (2009). Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing. Japanese journal of applied physics, 48(6 PART 2), 06FJ041-06FJ044. https://doi.org/10.1143/JJAP.48.06FJ04

Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing. / Kudo, Takashi; Kasama, Toshihiro; Ikeda, Takeshi; Hata, Yumehiro; Tokonami, Shiho; Yokoyama, Shin; Kikkawa, Takamaro; Sunami, Hideo; Ishikawa, Tomohiro; Suzuki, Masato; Okuyama, Kiyoshi; Tabei, Tetsuo; Ohkura, Kensaku; Kayaba, Yasuhisa; Tanushi, Yuuichirou; Amemiya, Yoshiteru; Cho, Yoshinori; Monzen, Tomomi; Murakami, Yuji; Kuroda, Akio; Nakajima, Anri.

In: Japanese journal of applied physics, Vol. 48, No. 6 PART 2, 06.2009, p. 06FJ041-06FJ044.

Research output: Contribution to journal › Article › peer-review

Kudo, T, Kasama, T, Ikeda, T, Hata, Y, Tokonami, S, Yokoyama, S, Kikkawa, T, Sunami, H, Ishikawa, T, Suzuki, M, Okuyama, K, Tabei, T, Ohkura, K, Kayaba, Y, Tanushi, Y, Amemiya, Y, Cho, Y, Monzen, T, Murakami, Y, Kuroda, A & Nakajima, A 2009, 'Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing', Japanese journal of applied physics, vol. 48, no. 6 PART 2, pp. 06FJ041-06FJ044. https://doi.org/10.1143/JJAP.48.06FJ04

Kudo, Takashi ; Kasama, Toshihiro ; Ikeda, Takeshi ; Hata, Yumehiro ; Tokonami, Shiho ; Yokoyama, Shin ; Kikkawa, Takamaro ; Sunami, Hideo ; Ishikawa, Tomohiro ; Suzuki, Masato ; Okuyama, Kiyoshi ; Tabei, Tetsuo ; Ohkura, Kensaku ; Kayaba, Yasuhisa ; Tanushi, Yuuichirou ; Amemiya, Yoshiteru ; Cho, Yoshinori ; Monzen, Tomomi ; Murakami, Yuji ; Kuroda, Akio ; Nakajima, Anri. / Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing. In: Japanese journal of applied physics. 2009 ; Vol. 48, No. 6 PART 2. pp. 06FJ041-06FJ044.

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abstract = "We fabricated a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) with a Si3N4 gate insulator for highly sensitive detection of target biomolecules. The fabricated SiNW FET acted as an ion-sensitive FET that could detect the charge density in solutions flowing along the gate surface by responding to the pH of the solutions. The SiNW FET also detected charged protein molecules in solution, suggesting that our device can be used in highly sensitive, label-free biosensing.",

author = "Takashi Kudo and Toshihiro Kasama and Takeshi Ikeda and Yumehiro Hata and Shiho Tokonami and Shin Yokoyama and Takamaro Kikkawa and Hideo Sunami and Tomohiro Ishikawa and Masato Suzuki and Kiyoshi Okuyama and Tetsuo Tabei and Kensaku Ohkura and Yasuhisa Kayaba and Yuuichirou Tanushi and Yoshiteru Amemiya and Yoshinori Cho and Tomomi Monzen and Yuji Murakami and Akio Kuroda and Anri Nakajima",

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AU - Ikeda, Takeshi

AU - Hata, Yumehiro

AU - Tokonami, Shiho

AU - Yokoyama, Shin

AU - Kikkawa, Takamaro

AU - Sunami, Hideo

AU - Ishikawa, Tomohiro

AU - Suzuki, Masato

AU - Okuyama, Kiyoshi

AU - Tabei, Tetsuo

AU - Ohkura, Kensaku

AU - Kayaba, Yasuhisa

AU - Tanushi, Yuuichirou

AU - Amemiya, Yoshiteru

AU - Cho, Yoshinori

AU - Monzen, Tomomi

AU - Murakami, Yuji

AU - Kuroda, Akio

AU - Nakajima, Anri

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AB - We fabricated a biosensor based on a silicon nanowire field-effect transistor (SiNW FET) with a Si3N4 gate insulator for highly sensitive detection of target biomolecules. The fabricated SiNW FET acted as an ion-sensitive FET that could detect the charge density in solutions flowing along the gate surface by responding to the pH of the solutions. The SiNW FET also detected charged protein molecules in solution, suggesting that our device can be used in highly sensitive, label-free biosensing.

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Fabrication of si nanowire field-effect transistor for highly sensitive, label-free biosensing

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