Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation

Yutaka Ohno; Seiji Takeda; Toshinari Ichihashi; Sumio Iijima

doi:10.1143/JJAP.46.434

Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation

Yutaka Ohno, Seiji Takeda, Toshinari Ichihashi, Sumio Iijima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be 0.3 ± 0.04 eV.

Original language	English
Pages (from-to)	434-439
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.46.434
Publication status	Published - 2007 Jan 10
Externally published	Yes

Keywords

Electron irradiation
Migration under electron irradiation
Silicon
Surface nanoholes
Surface vacancies

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.434

Fingerprint Dive into the research topics of 'Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation'. Together they form a unique fingerprint.

Cite this

@article{e5bfd93e7bb34fa69ff75504a478a47a,

title = "Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation",

abstract = "Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be 0.3 ± 0.04 eV.",

keywords = "Electron irradiation, Migration under electron irradiation, Silicon, Surface nanoholes, Surface vacancies",

author = "Yutaka Ohno and Seiji Takeda and Toshinari Ichihashi and Sumio Iijima",

year = "2007",

month = jan,

day = "10",

doi = "10.1143/JJAP.46.434",

language = "English",

volume = "46",

pages = "434--439",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation

AU - Ohno, Yutaka

AU - Takeda, Seiji

AU - Ichihashi, Toshinari

AU - Iijima, Sumio

PY - 2007/1/10

Y1 - 2007/1/10

N2 - Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be 0.3 ± 0.04 eV.

AB - Silicon surface nanoholes, which are small pits introduced spontaneously on the electron exit surfaces of silicon foils by electron irradiation, distribute orderly in a short range. The nearest-neighbor distance and mean opening area of the nanoholes exhibit an Arrhenius-like behavior at high temperatures. The formation mechanism is discussed in terms of the migration of surface vacancies under electron irradiation conditions, and the activation energy of the migration is estimated to be 0.3 ± 0.04 eV.

KW - Electron irradiation

KW - Migration under electron irradiation

KW - Silicon

KW - Surface nanoholes

KW - Surface vacancies

UR - http://www.scopus.com/inward/record.url?scp=34547865044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547865044&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.434

DO - 10.1143/JJAP.46.434

M3 - Article

AN - SCOPUS:34547865044

VL - 46

SP - 434

EP - 439

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -

Fabrication of short-range ordered nanoholes on silicon surfaces by electron irradiation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this