By using a Ga+ ion focused ion beam (FIB) to locally implant high doses Ga into SiO2 followed by vacuum annealing, self-assembled Ga nanodots can be fabricated with control over individual nanodot nucleation sites. A critical Ga dose of 2×1016ions/cm2 is required for nanodot nucleation. Based on Auger mapping data we have determined that at lower doses the Ga nanodots actually nucleate below the surface under a thin layer of SiO2. With increasing implanted Ga doses the nanodots increase in size and nucleate on the SiO2 surface as Ga droplets. We believe this is due to the Ga-SiO2 surface energy being lower compared to the Ga surface tension, initially making nucleation under the surface more stable. But as the nanodot grows the increasing energy of the SiO2 capping layer makes large nanodots more stable on the surface. By using ion implanting and making techniques, ISG can be applied to other material systems.
|Number of pages||4|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2005 Dec 1|
|Event||31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of|
Duration: 2004 Sep 12 → 2004 Dec 16
ASJC Scopus subject areas
- Physics and Astronomy(all)