Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

Xiaolong Li; Ming Zhao; Daming Zhuang; Mingjie Cao; Liangqi Ouyang; Li Guo; Rujun Sun; Zedong Gao

doi:10.1016/j.vacuum.2015.04.027

Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

Xiaolong Li, Ming Zhao, Daming Zhuang, Mingjie Cao, Liangqi Ouyang, Li Guo, Rujun Sun, Zedong Gao

Institute for Materials Research (IMR)

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

High density Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf>(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N<inf>2</inf> instead of toxic H<inf>2</inf>Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Vacuum
Volume	119
DOIs	https://doi.org/10.1016/j.vacuum.2015.04.027
Publication status	Published - 2015 May 10

Keywords

CIGS
Se-rich
Selenization
Sintering
Thin film

ASJC Scopus subject areas

Condensed Matter Physics
Instrumentation
Surfaces, Coatings and Films

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10.1016/j.vacuum.2015.04.027

Cite this

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title = "Fabrication of Se-rich Cu(In1-XGaX)Se2 quaternary ceramic target",

abstract = "High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.",

keywords = "CIGS, Se-rich, Selenization, Sintering, Thin film",

author = "Xiaolong Li and Ming Zhao and Daming Zhuang and Mingjie Cao and Liangqi Ouyang and Li Guo and Rujun Sun and Zedong Gao",

year = "2015",

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doi = "10.1016/j.vacuum.2015.04.027",

language = "English",

volume = "119",

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journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Fabrication of Se-rich Cu(In1-XGaX)Se2 quaternary ceramic target

AU - Li, Xiaolong

AU - Zhao, Ming

AU - Zhuang, Daming

AU - Cao, Mingjie

AU - Ouyang, Liangqi

AU - Guo, Li

AU - Sun, Rujun

AU - Gao, Zedong

PY - 2015/5/10

Y1 - 2015/5/10

N2 - High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

AB - High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

KW - CIGS

KW - Se-rich

KW - Selenization

KW - Sintering

KW - Thin film

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Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

Abstract

Keywords

ASJC Scopus subject areas

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