Abstract
High density Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf>(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N<inf>2</inf> instead of toxic H<inf>2</inf>Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.
Original language | English |
---|---|
Pages (from-to) | 15-18 |
Number of pages | 4 |
Journal | Vacuum |
Volume | 119 |
DOIs | |
Publication status | Published - 2015 May 10 |
Keywords
- CIGS
- Se-rich
- Selenization
- Sintering
- Thin film
ASJC Scopus subject areas
- Condensed Matter Physics
- Instrumentation
- Surfaces, Coatings and Films