Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta, R. Kumar, Syuuichi Noda, M. Kasai, Hiroshi Hoga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages304-312
Number of pages9
Publication statusPublished - 1994 Dec 1
EventPhotomask and X-Ray Mask Technology - Kawasaki City, Jpn
Duration: 1994 Apr 221994 Apr 22

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2254
ISSN (Print)0277-786X

Other

OtherPhotomask and X-Ray Mask Technology
CityKawasaki City, Jpn
Period94/4/2294/4/22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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