Fabrication of Pt/Sr2(Ta1-x,Nbx) 2O7/IrO2/SiO2/Si device with large memory window and metal-ferroelectric-metal-insulator-Si field-effect transistor

Ichirou Takahashi, Keita Azumi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

Abstract

Sr2(Ta1-x,Nbx)2O7 (STN, x = 0.3) is suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because it has a low dielectric constant and a high heat resistance. A new technology that enables the control of the orientation and properties (with a low dielectric constant and a large coercive field) of the STN film formed on an IrO2 film has been developed. We have successfully fabricated perovskite STN films with (110) and (172) orientations by controlling the crystal orientation of IrO2. An metal-ferroelectric-metal-insulator-Si (MFMIS) structure device with a large memory window of 2.5 V under 5 V writing operation has successfully been fabricated. Furthermore, the operation of the MFMIS FET, whose floating gate is IrO2 only, has been achieved for the first time.

Original languageEnglish
Pages (from-to)7336-7340
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 B
DOIs
Publication statusPublished - 2006 Sep 22

Keywords

  • Controlling crystal orientation of ferroelectric
  • Large memory window
  • MFMIS-FET with IrO floating gate
  • Sr(Ta,Nb)O (STN)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication of Pt/Sr<sub>2</sub>(Ta<sub>1-x</sub>,Nb<sub>x</sub>) <sub>2</sub>O<sub>7</sub>/IrO<sub>2</sub>/SiO<sub>2</sub>/Si device with large memory window and metal-ferroelectric-metal-insulator-Si field-effect transistor'. Together they form a unique fingerprint.

  • Cite this