Fabrication of pseudocubic SrRuO3 (100) epitaxial thin films on Si by pulsed laser deposition

Takamitsu Higuchi; Yuxi Chen; Junichi Koike; Setsuya Iwashita; Masaya Ishida; Tatsuya Shimoda

Fabrication of pseudocubic SrRuO₃ (100) epitaxial thin films on Si by pulsed laser deposition

Takamitsu Higuchi, Yuxi Chen, Junichi Koike, Setsuya Iwashita, Masaya Ishida, Tatsuya Shimoda

Research output: Contribution to journal › Letter › peer-review

Abstract

Pseudocubic SrRuO₃ (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO₃. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO₃ (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO₃ <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO₂ on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.

Original language	English
Pages (from-to)	L481-L483
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	4
Publication status	Published - 2002 Apr 15
Externally published	Yes

Keywords

Buffer layer
Cube-on-cube epitaxy
Pulsed laser deposition
Si
SrO
SrRuO
Thin film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

@article{cbce3d7f0b3f4eda87c283a14c4744fe,

title = "Fabrication of pseudocubic SrRuO3 (100) epitaxial thin films on Si by pulsed laser deposition",

abstract = "Pseudocubic SrRuO3 (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO3. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO3 <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO2 on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.",

keywords = "Buffer layer, Cube-on-cube epitaxy, Pulsed laser deposition, Si, SrO, SrRuO, Thin film",

author = "Takamitsu Higuchi and Yuxi Chen and Junichi Koike and Setsuya Iwashita and Masaya Ishida and Tatsuya Shimoda",

year = "2002",

month = apr,

day = "15",

language = "English",

volume = "41",

pages = "L481--L483",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Fabrication of pseudocubic SrRuO3 (100) epitaxial thin films on Si by pulsed laser deposition

AU - Higuchi, Takamitsu

AU - Chen, Yuxi

AU - Koike, Junichi

AU - Iwashita, Setsuya

AU - Ishida, Masaya

AU - Shimoda, Tatsuya

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Pseudocubic SrRuO3 (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO3. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO3 <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO2 on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.

AB - Pseudocubic SrRuO3 (100) epitaxial thin films were successfully fabricated on Si (100) with a SrO buffer layer of 6nm thickness by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the epitaxial growth of SrO occurred on naturally oxidized Si substrates, followed by the epitaxial growth of SrRuO3. X-ray diffraction (XRD) revealed high crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve. XRD study of the in-plane orientation clarified a cube-on-cube epitaxy in which SrRuO3 <010> was rotated by 45° with respect to Si <010>. Deoxidization of SiO2 on Si by Sr is thought to play an important role in realizing the epitaxial growth of SrO.

KW - Buffer layer

KW - Cube-on-cube epitaxy

KW - Pulsed laser deposition

KW - Si

KW - SrO

KW - SrRuO

KW - Thin film

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M3 - Letter

AN - SCOPUS:0037089121

VL - 41

SP - L481-L483

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

ER -

Fabrication of pseudocubic SrRuO₃ (100) epitaxial thin films on Si by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

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