Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Nokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

Original languageEnglish
Pages (from-to)11-19
Number of pages9
JournalElectronics and Communications in Japan
Volume99
Issue number5
DOIs
Publication statusPublished - 2016 May 1

Keywords

  • MEMS
  • Pierce-type electron emitter
  • massively parallel electron beam lithography
  • nanocrystalline silicon

ASJC Scopus subject areas

  • Signal Processing
  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Applied Mathematics

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