Fabrication of pierce-type nanocrystalline si electron-emitter array for massively parallel electron beam lithography

Hitoshi Nishino, Shinya Yoshida, Akira Kojima, Naokatsu Ikegami, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This paper reports on the fundamental process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array, the LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies.

Original languageEnglish
Pages (from-to)146-153
Number of pages8
JournalIEEJ Transactions on Sensors and Micromachines
Volume134
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

Keywords

  • Electron emitter
  • MEMS
  • Nanocrystalline silicon
  • Pierce typed electron emitter

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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