Fabrication of p-i-n Si0.5Ge0.5 photodetctors on SiGe-on-Insulator Substrates

S. Koh, K. Sawano, Y. Shiraki, N. Usami, K. Nakajima, X. Huang, S. Uda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The fabrication and evaluation of a p-i-n Si0.5Ge0.5 photodetectors for 1.3 μm light detection on SiGe-on-insulator (SGOI) substrates with the Ge content of 0.5 was discussed. The photoresponsivity of the fabricated p-i-n diode was measured using monochromatic DC light with a fixed power and a computer interfaced digital multimeter. The responsivity has an oscillatory structure that is due to the multiple reflections at the interface between the buried oxide and SGOI layer. The dark current density of the p-i-n diodes at the voltage of -1 V was measured to be 0.04 mA/cm 2 which is one order lower than that of Ge p-i-n diode structures grown on SiGe graded buffer layers.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages61-63
Number of pages3
Publication statusPublished - 2004 Dec 1
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Publication series

Name2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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