Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

Shigefusa F. Chichibu, Takuya Ohmori, Naoyuki Shibata, Takahiro Koyama, Takeyoshi Onuma

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Greenish-white electroluminescence (EL) was observed from the heterojunction light-emitting diodes (LEDs) composed of p-type (001) CuGaS 2 chalcopyrite semiconductor epilayers and preferentially (0001)-oriented polycrystalline n-type ZnO thin films. The CuGaS2 layers were grown on a (001) GaP substrate by metalorganic vapor phase epitaxy and the ZnO films were deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The n-ZnO/p-CuGaS2 LED structure was designed to enable an electron injection from the n-type wider band gap material forming a TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although their higher energy portions were absorbed by the GaP substrate. Since the spectral lineshape resembled that of the photoluminescence from identical CuGaS 2 epilayers, the EL was assigned to originate from p-CuGaS 2.

Original languageEnglish
Pages (from-to)1868-1871
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume66
Issue number11
DOIs
Publication statusPublished - 2005 Nov 1
Externally publishedYes

Keywords

  • A. Metalorganic vapor phase epitaxy (MOVPE)
  • A. Semiconductors
  • B. Chalcopyrites compounds
  • B. Light-emitting diodes
  • B. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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