Fabrication of novel si double-barrier structures and their characteristics

Koichiro Yuki, Yoshihiko Hirai, Kiyoshi Morimoto, Kaoru Inoue, Masaaki Niwa, Juro Yasui

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A novel Si (silicon)-based double-barrier structure (DBS) is newly proposed to study Si resonant tunneling devices. To form a thin Si single-crystal plate as a quantum well, anisotropic wet chemical etching and thermal oxidation are adopted. The DBS has a 43 nm-wide Si quantum well and 2.3 nm-thick SiO2 barriers. The electrical characteristic exhibits negative differential conductance (NDC).

Original languageEnglish
Pages (from-to)860-863
Number of pages4
JournalJapanese journal of applied physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Feb

Keywords

  • Anisotropicetching
  • Double-barrier structure
  • Negative differential conductance
  • Quantum well
  • Resonant tunneling
  • Si

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yuki, K., Hirai, Y., Morimoto, K., Inoue, K., Niwa, M., & Yasui, J. (1995). Fabrication of novel si double-barrier structures and their characteristics. Japanese journal of applied physics, 34(2S), 860-863. https://doi.org/10.1143/JJAP.34.860