Fabrication of novel si double-barrier structures and their characteristics

Koichiro Yuki, Yoshihiko Hirai, Kiyoshi Morimoto, Kaoru Inoue, Masaaki Niwa, Juro Yasui

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A novel Si (silicon)-based double-barrier structure (DBS) is newly proposed to study Si resonant tunneling devices. To form a thin Si single-crystal plate as a quantum well, anisotropic wet chemical etching and thermal oxidation are adopted. The DBS has a 43 nm-wide Si quantum well and 2.3 nm-thick SiO2 barriers. The electrical characteristic exhibits negative differential conductance (NDC).

Original languageEnglish
Pages (from-to)860-863
Number of pages4
JournalJapanese journal of applied physics
Issue number2S
Publication statusPublished - 1995 Feb
Externally publishedYes


  • Anisotropicetching
  • Double-barrier structure
  • Negative differential conductance
  • Quantum well
  • Resonant tunneling
  • Si

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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