Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Abhiram Gundimeda, Shibin Krishna, Neha Aggarwal, Alka Sharma, Nita Dilawar Sharma, K. K. Maurya, Sudhir Husale, Govind Gupta

Research output: Contribution to journalArticlepeer-review

Abstract

We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Original languageEnglish
Article number103507
JournalApplied Physics Letters
Volume110
Issue number10
DOIs
Publication statusPublished - 2017 Mar 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Fabrication of non-polar GaN based highly responsive and fast UV photodetector'. Together they form a unique fingerprint.

Cite this