Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Abhiram Gundimeda; Shibin Krishna; Neha Aggarwal; Alka Sharma; Nita Dilawar Sharma; K. K. Maurya; Sudhir Husale; Govind Gupta

doi:10.1063/1.4978427

Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Abhiram Gundimeda, Shibin Krishna, Neha Aggarwal, Alka Sharma, Nita Dilawar Sharma, K. K. Maurya, Sudhir Husale, Govind Gupta

Research output: Contribution to journal › Article › peer-review

Abstract

We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 10⁹ Jones and noise equivalent power of 2.4 × 10^-11 WHz^-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Original language	English
Article number	103507
Journal	Applied Physics Letters
Volume	110
Issue number	10
DOIs	https://doi.org/10.1063/1.4978427
Publication status	Published - 2017 Mar 6
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fabrication of non-polar GaN based highly responsive and fast UV photodetector",

abstract = "We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.",

author = "Abhiram Gundimeda and Shibin Krishna and Neha Aggarwal and Alka Sharma and Sharma, {Nita Dilawar} and Maurya, {K. K.} and Sudhir Husale and Govind Gupta",

note = "Funding Information: The Director, CSIR-NPL, New Delhi is acknowledged for his constant encouragement and support. Authors would like to thank Mrs. Mandeep Kaur for FESEM measurements. This work is financially supported by NWP-55 and PSC-0109 projects. S.K. is thankful to the Department of Science and Technology, India & Simco Global Technology & Systems Ltd. for prestigious Prime Minister Doctoral Fellowship. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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AU - Gundimeda, Abhiram

AU - Krishna, Shibin

AU - Aggarwal, Neha

AU - Sharma, Alka

AU - Sharma, Nita Dilawar

AU - Maurya, K. K.

AU - Husale, Sudhir

AU - Gupta, Govind

N1 - Funding Information: The Director, CSIR-NPL, New Delhi is acknowledged for his constant encouragement and support. Authors would like to thank Mrs. Mandeep Kaur for FESEM measurements. This work is financially supported by NWP-55 and PSC-0109 projects. S.K. is thankful to the Department of Science and Technology, India & Simco Global Technology & Systems Ltd. for prestigious Prime Minister Doctoral Fellowship. Publisher Copyright: © 2017 Author(s).

PY - 2017/3/6

Y1 - 2017/3/6

N2 - We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

AB - We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

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Fabrication of non-polar GaN based highly responsive and fast UV photodetector

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