Abstract
Nanowire formation in Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. Gelation of the polymer along the ion track results in cross-linking to produce nanowires with size and number density controllable by selecting appropriate ion beam characteristics and polymer materials. Ion bombardment of poly(carbosilane) (PCS), PCS-poly(vinylsilane) blend polymer, and poly(methylphenylsilane) produces nanowires with radii of 7-30 nm depending on the type of ion beam. The difference in size is shown to be related to the efficiency of the cross-linking reaction considering the deposited energy distribution along the ion tracks.
| Original language | English |
|---|---|
| Pages (from-to) | 3407-3409 |
| Number of pages | 3 |
| Journal | Journal of Physical Chemistry B |
| Volume | 108 |
| Issue number | 11 |
| Publication status | Published - 2004 Mar 18 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Materials Chemistry
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Cite this
Tsukuda, S., Seki, S., Tagawa, S., Sugimoto, M., Idesaki, A., Tanaka, S., & Oshima, A. (2004). Fabrication of nanowires using high-energy ion beams. Journal of Physical Chemistry B, 108(11), 3407-3409.