TY - JOUR
T1 - Fabrication of nanoscale three-dimensional graphite stacked-junctions by focused-ion-beam and observation of anomalous transport characteristics
AU - Venugopal, Gunasekaran
AU - Jung, Myung Ho
AU - Suemitsu, Maki
AU - Kim, Sang Jae
N1 - Funding Information:
We would like to thank Professor Hu-Jong Lee (Department of Physics, POSTECH, Pohang, Republic of Korea) for supplying graphite material for our research work. This research was supported by a National Research Foundation of Korea grant under Contract No. 2009-0087091 . Part of this research was also supported by 2000 Jeju Sea Grant College Program funded by Ministry of Land, Transport and Maritime Affairs (ML TM), Republic of Korea . Part of this work was carried out at Research Instrument Center (RIC), Jeju National University, Jeju, Republic of Korea. Also we thank Dr. Rajneesh Mohan for the critical reading of this manuscript.
PY - 2011/7
Y1 - 2011/7
N2 - We report on the fabrication and transport characteristics of nanoscale stacked-junctions of thin graphite flake. The stacked-junctions were fabricated using a three-dimensional focused-ion-beam milling. By varying the effective in-plane area down to submicron scale, the stacked-junctions with in-plane area A (from 2 down to 0.25 μm2) and stack height-length (from 300 to 100 nm) along c-axis were fabricated. The nano-stack shows perfect c-axis transport characteristics in which we observed a semiconducting behavior for T > 65 K and metallic behavior for T < 65 K. The obtained results were well fitted with the c-axis electrical conduction mechanism. The stack with in-plane area A of 0.25 μm2 showed nonlinear concave-like I-V characteristics even at 300 K; however the stack with A ≥ 1 μm2 were shown an ohmic-like I-V characteristic at 300 K for both low and high-current biasing. It turned into nonlinear characteristics when the temperature goes down. The observation of this anomalous transport characteristics were discussed in detail with stack capacitance calculations. The nonlinear characteristics observed at 300 K for the stack with A of 0.25 μm2 were shown best fit with Fowler-Nordheim tunneling model.
AB - We report on the fabrication and transport characteristics of nanoscale stacked-junctions of thin graphite flake. The stacked-junctions were fabricated using a three-dimensional focused-ion-beam milling. By varying the effective in-plane area down to submicron scale, the stacked-junctions with in-plane area A (from 2 down to 0.25 μm2) and stack height-length (from 300 to 100 nm) along c-axis were fabricated. The nano-stack shows perfect c-axis transport characteristics in which we observed a semiconducting behavior for T > 65 K and metallic behavior for T < 65 K. The obtained results were well fitted with the c-axis electrical conduction mechanism. The stack with in-plane area A of 0.25 μm2 showed nonlinear concave-like I-V characteristics even at 300 K; however the stack with A ≥ 1 μm2 were shown an ohmic-like I-V characteristic at 300 K for both low and high-current biasing. It turned into nonlinear characteristics when the temperature goes down. The observation of this anomalous transport characteristics were discussed in detail with stack capacitance calculations. The nonlinear characteristics observed at 300 K for the stack with A of 0.25 μm2 were shown best fit with Fowler-Nordheim tunneling model.
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U2 - 10.1016/j.carbon.2011.03.003
DO - 10.1016/j.carbon.2011.03.003
M3 - Article
AN - SCOPUS:79953778402
VL - 49
SP - 2766
EP - 2772
JO - Carbon
JF - Carbon
SN - 0008-6223
IS - 8
ER -