Fabrication of multiferroic co-substituted bifeo3 epitaxial films on srtio3 (100) substrates by radio frequency magnetron sputtering

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9 Citations (Scopus)


The 10 at.% Co-substituted BiFeO3 films (of thickness 50nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO3 (100) substrates with epitaxial relationships of [001](001)Co-BiFeO3//[001](001)SrTiO3. In this study, a single phase Co-substituted BiFeO3 epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O2 gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiOx. The Co-substituted BiFeO3 films were crystalized with post-annealing at 600 {ring operator}C in air. The process window for single phase films is narrower than that for pure BiFeO3 epitaxial films. By substituting Fe with Co in BiFeO3, the magnetization at room temperature increased to 20emu/cm3. This result suggests that Co-substituted BiFeO3 films can be used in spin-filter devices.

Original languageEnglish
Pages (from-to)1087-1095
Number of pages9
Issue number6
Publication statusPublished - 2011


  • Bicoo
  • Bifeo
  • Multiferroic
  • R.f. Magnetron sputtering

ASJC Scopus subject areas

  • Materials Science(all)

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