Abstract
A new electrochemical etch stop which does not require external contacts or power source has been studied. This technique yields a simple and effective method to achieve an etch-stop. The passivation voltage is generated internally in a Au/Cr/n-Si/TMAH cell. Test structures have been used to examine the conditions required for the etch stop. Silicon membranes have been fabricated using this etch stop technique to demonstrate the applicability to microsensors.
Original language | English |
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Pages | 703-706 |
Number of pages | 4 |
Publication status | Published - 1997 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2) - Chicago, IL, USA Duration: 1997 Jun 16 → 1997 Jun 19 |
Other
Other | Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2) |
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City | Chicago, IL, USA |
Period | 97/6/16 → 97/6/19 |
ASJC Scopus subject areas
- Engineering(all)