Fabrication of micromechanical structures with a new electrodeless electrochemical etch stop

C. M.A. Ashruf; P. J. French; P. M. Sarro; M. Nagao; Masayoshi Esashi

Fabrication of micromechanical structures with a new electrodeless electrochemical etch stop

C. M.A. Ashruf, P. J. French, P. M. Sarro, M. Nagao, Masayoshi Esashi

Research output: Contribution to conference › Paper › peer-review

Abstract

A new electrochemical etch stop which does not require external contacts or power source has been studied. This technique yields a simple and effective method to achieve an etch-stop. The passivation voltage is generated internally in a Au/Cr/n-Si/TMAH cell. Test structures have been used to examine the conditions required for the etch stop. Silicon membranes have been fabricated using this etch stop technique to demonstrate the applicability to microsensors.

Original language	English
Pages	703-706
Number of pages	4
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2) - Chicago, IL, USA Duration: 1997 Jun 16 → 1997 Jun 19

Other

Other	Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2)
City	Chicago, IL, USA
Period	97/6/16 → 97/6/19

ASJC Scopus subject areas

Engineering(all)

Cite this

Fabrication of micromechanical structures with a new electrodeless electrochemical etch stop. / Ashruf, C. M.A.; French, P. J.; Sarro, P. M.; Nagao, M.; Esashi, Masayoshi.

1997. 703-706 Paper presented at Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2), Chicago, IL, USA.

Research output: Contribution to conference › Paper › peer-review

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abstract = "A new electrochemical etch stop which does not require external contacts or power source has been studied. This technique yields a simple and effective method to achieve an etch-stop. The passivation voltage is generated internally in a Au/Cr/n-Si/TMAH cell. Test structures have been used to examine the conditions required for the etch stop. Silicon membranes have been fabricated using this etch stop technique to demonstrate the applicability to microsensors.",

author = "Ashruf, {C. M.A.} and French, {P. J.} and Sarro, {P. M.} and M. Nagao and Masayoshi Esashi",

year = "1997",

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AU - Ashruf, C. M.A.

AU - French, P. J.

AU - Sarro, P. M.

AU - Nagao, M.

AU - Esashi, Masayoshi

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A new electrochemical etch stop which does not require external contacts or power source has been studied. This technique yields a simple and effective method to achieve an etch-stop. The passivation voltage is generated internally in a Au/Cr/n-Si/TMAH cell. Test structures have been used to examine the conditions required for the etch stop. Silicon membranes have been fabricated using this etch stop technique to demonstrate the applicability to microsensors.

AB - A new electrochemical etch stop which does not require external contacts or power source has been studied. This technique yields a simple and effective method to achieve an etch-stop. The passivation voltage is generated internally in a Au/Cr/n-Si/TMAH cell. Test structures have been used to examine the conditions required for the etch stop. Silicon membranes have been fabricated using this etch stop technique to demonstrate the applicability to microsensors.

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M3 - Paper

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T2 - Proceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2)

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ER -

Fabrication of micromechanical structures with a new electrodeless electrochemical etch stop

Abstract

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ASJC Scopus subject areas

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