Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

Akihiro Takahashi, Takahito Ono, Ikusei Rin, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2-20 Um, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-μm-thick cantilever exhibits a high quality factor of 5700.

Original languageEnglish
Title of host publication2006 5th IEEE Conference on Sensors
Pages1305-1308
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 5th IEEE Conference on Sensors - Daegu, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

NameProceedings of IEEE Sensors

Other

Other2006 5th IEEE Conference on Sensors
CountryKorea, Republic of
CityDaegu
Period06/10/2206/10/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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