Fabrication of MgO-based magnetic tunnel junctions with CoCrPt perpendicularly magnetized electrodes

Daisuke Watanabe, Shigemi Mizukami, Mikihiko Oogane, Hiroshi Naganuma, Yasuo Ando, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The applicability of perpendicularly magnetized CoCrPt films to the MgO-based magnetic tunnel junctions (MTJs) was investigated. For this study, CoCrPt films deposited on the Ru buffer exhibited hcp(0002)-oriented growth by sputtering method using the low substrate temperature of 250 °C, low saturation magnetization of around 360 emu/ cm3, and high magnetic anisotropy field of 6 kOe, which is sufficient to retain the thermal stability of the magnetization direction. The MgO-based MTJs with a synthetic ferrimagnetlike structure were fabricated: CoFe was coupled magnetically with CoCrPt through the thin Ru layer. Transport properties with a magnetic field applied perpendicular to the film plane revealed a tunnel magnetoresistance ratio of about 6% at room temperature.

Original languageEnglish
Article number07C911
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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