Abstract
In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.
Original language | English |
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Article number | 012086 |
Journal | Journal of Physics: Conference Series |
Volume | 266 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 |
ASJC Scopus subject areas
- Physics and Astronomy(all)