In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.
ASJC Scopus subject areas
- Physics and Astronomy(all)