Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

Tatsuya Aoki; Yasuo Ando; Mikihiko Oogane; Hiroshi Naganuma

doi:10.1088/1742-6596/266/1/012086

Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

Tatsuya Aoki, Yasuo Ando, Mikihiko Oogane, Hiroshi Naganuma

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

Original language	English
Article number	012086
Journal	Journal of Physics: Conference Series
Volume	266
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/266/1/012086
Publication status	Published - 2011

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.",

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AB - In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

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