Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

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Abstract

In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

Original languageEnglish
Article number012086
JournalJournal of Physics: Conference Series
Volume266
Issue number1
DOIs
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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