Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

Tatsuya Aoki; Yasuo Ando; Mikihiko Oogane; Hiroshi Naganuma

doi:10.1088/1742-6596/266/1/012086

Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

Tatsuya Aoki, Yasuo Ando, Mikihiko Oogane, Hiroshi Naganuma

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

Abstract

In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

Original language	English
Article number	012086
Journal	Journal of Physics: Conference Series
Volume	266
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/266/1/012086
Publication status	Published - 2011

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/266/1/012086

Cite this

@article{775f878d31bc4656b68a4ceca370bfdd,

title = "Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching",

abstract = "In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.",

author = "Tatsuya Aoki and Yasuo Ando and Mikihiko Oogane and Hiroshi Naganuma",

year = "2011",

doi = "10.1088/1742-6596/266/1/012086",

language = "English",

volume = "266",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

AU - Aoki, Tatsuya

AU - Ando, Yasuo

AU - Oogane, Mikihiko

AU - Naganuma, Hiroshi

PY - 2011

Y1 - 2011

N2 - In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

AB - In the development of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs), characterizing the physics in sub-ns STT switching is a crucial issue for designing operation schemes. This paper describes the procedure we used to fabricate MgO-based magnetic tunnel junctions for measuring sub-ns STT switching. We also discuss the sub-ns STT switching properties based on the quasi-static properties.

UR - http://www.scopus.com/inward/record.url?scp=79952034805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952034805&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/266/1/012086

DO - 10.1088/1742-6596/266/1/012086

M3 - Article

AN - SCOPUS:79952034805

VL - 266

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012086

ER -

Fabrication of MgO-based magnetic tunnel junctions for subnanosecond spin transfer switching

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this