Abstract
Spinel MgAl2O4 thin films were deposited on MgO single-crystal substrates and epitaxial Fe (or Fe4N) thin films by RF-sputtering from a ceramic target. Epitaxial relationship was confirmed by X-ray diffraction analysis between the crystalline spinel MgAl2O4 films and the respective substrate and underlayers, while no diffraction peak was observed from the films deposited on amorphous substrates. Spin-valve type magnetic tunnel junctions (MTJs) with a stacking structure of Fe [Fe4N]/MgAl2O4/CoFeB/Ru/Fe/MnIr exhibited normal [inverse] tunnel magnetoresistance (TMR) effect, reflecting the sign of spin polarization of Fe [Fe4N]. The maximum magnitude of the TMR ratio obtained for the Fe-based and Fe4N-based MTJs was 67% and 18%, respectively. The resistance area product values of the MTJs were significantly larger than the reported values for the MTJs with a post-oxidized spinel MgAl2O4 barrier.
Original language | English |
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Article number | 17D703 |
Journal | Journal of Applied Physics |
Volume | 117 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2015 May 7 |
ASJC Scopus subject areas
- Physics and Astronomy(all)