Fabrication of magnetic tunnel junctions with amorphous CoFeSiB ferromagnetic electrode for magnetic field sensor devices

Daiki Kato, Mikihiko Oogane, Kosuke Fujiwara, Takuo Nishikawa, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR=(2Hκ), where TMR is the tunnel magnetoresistance ratio and Hκ is the magnetic anisotropy field of the free layer of MTJs.

Original languageEnglish
Article number103004
JournalApplied Physics Express
Volume6
Issue number10
DOIs
Publication statusPublished - 2013 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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