Fabrication of magnetic tunnel junctions with amorphous CoFeSiB ferromagnetic electrode for magnetic field sensor devices

Daiki Kato; Mikihiko Oogane; Kosuke Fujiwara; Takuo Nishikawa; Hiroshi Naganuma; Yasuo Ando

doi:10.7567/APEX.6.103004

Fabrication of magnetic tunnel junctions with amorphous CoFeSiB ferromagnetic electrode for magnetic field sensor devices

Daiki Kato, Mikihiko Oogane, Kosuke Fujiwara, Takuo Nishikawa, Hiroshi Naganuma, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR=(2H_κ), where TMR is the tunnel magnetoresistance ratio and H_κ is the magnetic anisotropy field of the free layer of MTJs.

Original language	English
Article number	103004
Journal	Applied Physics Express
Volume	6
Issue number	10
DOIs	https://doi.org/10.7567/APEX.6.103004
Publication status	Published - 2013 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR=(2Hκ), where TMR is the tunnel magnetoresistance ratio and Hκ is the magnetic anisotropy field of the free layer of MTJs.",

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AU - Kato, Daiki

AU - Oogane, Mikihiko

AU - Fujiwara, Kosuke

AU - Nishikawa, Takuo

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

PY - 2013/10

Y1 - 2013/10

N2 - The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR=(2Hκ), where TMR is the tunnel magnetoresistance ratio and Hκ is the magnetic anisotropy field of the free layer of MTJs.

AB - The magnetic tunnel junctions (MTJs) with a soft magnetic CoFeSiB amorphous electrode and a MgO barrier layer were fabricated. A double annealing process was carried out to obtain the linear resistance response to the external magnetic field. The effect of the annealing temperature on the sensitivity of magnetic sensors was systematically investigated. We achieved a high sensitivity of 40%/Oe, where the sensitivity is defined as TMR=(2Hκ), where TMR is the tunnel magnetoresistance ratio and Hκ is the magnetic anisotropy field of the free layer of MTJs.

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Fabrication of magnetic tunnel junctions with amorphous CoFeSiB ferromagnetic electrode for magnetic field sensor devices

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