Fabrication of magnetic tunnel junctions with amorphous CoFeSiB for the bio-magnetic field sensor devices

Daiki Kato, Mikihiko Ogane, Kosuke Fujiwara, Takuo Nishikawa, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

Abstract

In magnetic tunnel junctions (MTJs), the resistance changes by external magnetic field through tunnel magnetoresistance (TMR) effect and MTJs can be applied to magnetic field sensors. To detect a small bio-magnetic field, we have to develop MTJs with high sensitivity (=TMR/2Hk, Hk: magnetic anisotropy field) of more than 100%/Oe, which is two digit larger than that of actual devices. In this work, MTJs with a low Hk CoFeSiB amorphous electrode was fabricated to realize such a highly sensitive magnetic sensor. After optimizing the preparation condition of CoFeSiB, a very high sensitivity of 40%/Oe was obtained. The result came much closer to our goal.

Original languageEnglish
Pages (from-to)O-504
JournalTransactions of Japanese Society for Medical and Biological Engineering
Volume52
DOIs
Publication statusPublished - 2014 Aug 17

Keywords

  • Bio-magnetic field
  • Magnetic field sensor
  • Magnetic tunnel junction

ASJC Scopus subject areas

  • Biomedical Engineering

Fingerprint

Dive into the research topics of 'Fabrication of magnetic tunnel junctions with amorphous CoFeSiB for the bio-magnetic field sensor devices'. Together they form a unique fingerprint.

Cite this