Fabrication of magnetic tunnel junctions with a synthetic ferrimagnetic free layer for magnetic field sensor applications

Kousuke Fujiwara, Mikihiko Oogane, Futoyoshi Kou, Daisuke Watanabe, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) with a CoFeB/Ru/Ni80Fe20 synthetic ferrimagnetic free layer and an MgO barrier layer were fabricated. The effect of the shape and thickness of the free layer on the magnetic field sensor characteristics was systematically investigated. We achieved a high sensitivity of 4.8%/Oe in the MTJ with a 70-nm-thick Ni80Fe20 layer and an aspect ratio of 1.0. Here, sensitivity is defined as TMR/(2Hk), where TMR is tunnel magnetoresistance ratio in the MTJ and Hk is a magnetic anisotropy field of the free layer. Furthermore, we successfully increased the detection field range up to 230 Oe while keeping high sensitivity and linearity.

Original languageEnglish
Article number013001
JournalJapanese journal of applied physics
Volume50
Issue number1
DOIs
Publication statusPublished - 2011 Jan

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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