Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

Kazuma Kunimatsu, Tomoki Tsuchiya, Kelvin Elphick, Tomohiro Ichinose, Kazuya Z. Suzuki, Atsufumi Hirohata, Shigemi Mizukami

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm-3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350 °C, indicating that bcc Co3Mn alloys have relatively high spin polarization.

Original languageEnglish
Article number080908
JournalJapanese journal of applied physics
Issue number8
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication of magnetic tunnel junctions with a metastable bcc Co<sub>3</sub>Mn disordered alloy as a bottom electrode'. Together they form a unique fingerprint.

Cite this