Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

Kosuke Fujiwara, Mikihiko Oogane, Saeko Yokota, Takuo Nishikawa, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Magnetic tunnel junctions with a Ni 80Fe 20/Ru/Co 40Fe 40B 20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3/Oe while keeping linearity.

Original languageEnglish
Article number07C710
JournalJournal of Applied Physics
Volume111
Issue number7
DOIs
Publication statusPublished - 2012 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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