Fabrication of magnetic tunnel junction with FePt nanodots for magnetic nanodot memory

Cheng Kuan Yin, Mariappan Murugesan, Ji Chel Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

FePt nanodots dispersed in SiO2 insulating film with high-density (1.2 × 1013/cm2) was formed by self-assembled nanodot deposition (SAND) method. After annealing at 600°C for 1 h, the XRD and SQUID result indicate that, L10 face-centered-tetragonal (fct) FePt magnetic nanodots was formed with high coercivity of 1.15T. Furthermore, a magnetic tunnel junction with FePt magnetic nanodots was successfully fabricated and the magnetic tunnel junction formed on the thermally oxidized silicon substrate to fabricated magnetic metal-oxide-semiconductor (MOS) capacitor. The fundamental characteristics of MND memory were confirmed using magnetic MOS capacitor.

Original languageEnglish
Title of host publicationSemiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
Pages418-422
Number of pages5
Publication statusPublished - 2006 Dec 1
Event6th International Conference on Semiconductor Technology, ISTC2007 - Shanghai, China
Duration: 2007 Mar 182007 Mar 20

Publication series

NameSemiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology

Other

Other6th International Conference on Semiconductor Technology, ISTC2007
CountryChina
CityShanghai
Period07/3/1807/3/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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