Fabrication of lattice-tunable Ba                         1-x                         Sr                         x                         TiO                          3                          buffers on a SrTiO                         3                          substrate

Kota Terai; Mikk Lippmaa; Parhat Ahmet; Toyohiro Chikyow; Hideomi Koinuma; Makoto Ohtani; Masashi Kawasaki

doi:10.1016/j.apsusc.2003.10.004

Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate

Kota Terai, Mikk Lippmaa, Parhat Ahmet, Toyohiro Chikyow, Hideomi Koinuma, Makoto Ohtani, Masashi Kawasaki

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Solid state combinatorial synthesis of oxide thin films is an attractive proposition due to the large number of compositions that could have potentially useful properties. Thin film growth, however, presents a unique set of problems related to the formation of heterointerfaces. Although this problem affects mostly the study of heterostructures, even simple film growth has to handle the substrate-film interface. We have developed a technique for growing lattice constant tunable Ba _1-x Sr _x TiO ₃ (BSTO)/BaTiO ₃ (BTO) buffer layers on SrTiO ₃ (STO) substrates in order to study the effects of lattice strain in a systematic way in combinatorial thin film libraries. We show that by combining low temperature deposition and high temperature annealing, it is possible to grow buffers with an in-plane lattice constant gradient in the range of 3.9-4.02 Å using a composition spread Ba _1-x Sr _x TiO ₃ layer.

Original language	English
Pages (from-to)	183-187
Number of pages	5
Journal	Applied Surface Science
Volume	223
Issue number	1-3
DOIs	https://doi.org/10.1016/j.apsusc.2003.10.004
Publication status	Published - 2004 Feb 15
Externally published	Yes

Keywords

Buffer layer
Composition spread
Strain

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2003.10.004

Cite this

Terai, K., Lippmaa, M., Ahmet, P., Chikyow, T., Koinuma, H., Ohtani, M., & Kawasaki, M. (2004). Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate Applied Surface Science, 223(1-3), 183-187. https://doi.org/10.1016/j.apsusc.2003.10.004

Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate . / Terai, Kota; Lippmaa, Mikk; Ahmet, Parhat et al.

In: Applied Surface Science, Vol. 223, No. 1-3, 15.02.2004, p. 183-187.

Research output: Contribution to journal › Article › peer-review

Terai, K, Lippmaa, M, Ahmet, P, Chikyow, T, Koinuma, H, Ohtani, M & Kawasaki, M 2004, ' Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate ', Applied Surface Science, vol. 223, no. 1-3, pp. 183-187. https://doi.org/10.1016/j.apsusc.2003.10.004

Terai K, Lippmaa M, Ahmet P, Chikyow T, Koinuma H, Ohtani M et al. Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate Applied Surface Science. 2004 Feb 15;223(1-3):183-187. doi: 10.1016/j.apsusc.2003.10.004

Terai, Kota ; Lippmaa, Mikk ; Ahmet, Parhat et al. / Fabrication of lattice-tunable Ba _1-x Sr _x TiO ₃ buffers on a SrTiO ₃ substrate In: Applied Surface Science. 2004 ; Vol. 223, No. 1-3. pp. 183-187.

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abstract = " Solid state combinatorial synthesis of oxide thin films is an attractive proposition due to the large number of compositions that could have potentially useful properties. Thin film growth, however, presents a unique set of problems related to the formation of heterointerfaces. Although this problem affects mostly the study of heterostructures, even simple film growth has to handle the substrate-film interface. We have developed a technique for growing lattice constant tunable Ba 1-x Sr x TiO 3 (BSTO)/BaTiO 3 (BTO) buffer layers on SrTiO 3 (STO) substrates in order to study the effects of lattice strain in a systematic way in combinatorial thin film libraries. We show that by combining low temperature deposition and high temperature annealing, it is possible to grow buffers with an in-plane lattice constant gradient in the range of 3.9-4.02 {\AA} using a composition spread Ba 1-x Sr x TiO 3 layer.",

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