Abstract
Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.
Original language | English |
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Pages (from-to) | 447-451 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 301-302 |
Issue number | SPEC. ISS. |
DOIs | |
Publication status | Published - 2007 Apr 1 |
Keywords
- A1. Kelvin force microscopy
- A1. Lattice polarity
- A1. Raman scattering
- A3. RF-MBE
- B1. Nitrides
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry