TY - JOUR
T1 - Fabrication of lateral lattice-polarity-inverted GaN heterostructure
AU - Katayama, Ryuji
AU - Kuge, Yoshihiro
AU - Kondo, Takashi
AU - Onabe, Kentaro
N1 - Funding Information:
This work was supported by the Grant-in-Aid for Young Scientists (B) No. 16760032 from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and the Futaba Electronics Memorial Foundation. The authors appreciate for the helpful assistances provided by Mr. M. Ichikawa of ISSP in the FIB process, by Dr. S. Ikeda in the KFM measurements and Dr. H. Matsuzaki in the Raman scattering investigations.
PY - 2007/4
Y1 - 2007/4
N2 - Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.
AB - Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.
KW - A1. Kelvin force microscopy
KW - A1. Lattice polarity
KW - A1. Raman scattering
KW - A3. RF-MBE
KW - B1. Nitrides
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U2 - 10.1016/j.jcrysgro.2006.11.182
DO - 10.1016/j.jcrysgro.2006.11.182
M3 - Article
AN - SCOPUS:33947313153
VL - 301-302
SP - 447
EP - 451
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -