L1o-FeNi films textured with the a-axis perpendicular to the film plane were successfully fabricated by denitriding FeNiN films. 20-nm-thick FeNiN films with two variants were epitaxially grown on SrTiO3(001), MgAl2O4(001), and MgO(001) substrates by molecular beam epitaxy. Denitriding was performed by annealing at 300 °C for 4 h under an H2 gas atmosphere. The epitaxial relationships were L10-FeNi(100) || substrate[l00](001) and L10-FeNi(l00) || substrate(001). The uniaxial magnetic anisotropy energy (Ku) of the L10-FeNi film was estimated to be 4.4 x 106 erg/cm3 at room temperature by magnetic torque measurement. This Ku value corresponds to a degree of long range order of 0.4.
- Molecular beam epitaxy
- Uniaxial magnetic anisotropy energy
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics