Fabrication of L1o-feni films by denitriding FeNiN films

Keita Ito, Masahiro Hayashida, Masaki Mizuguchi, Takashi Suemasu, Hideto Yanagihara, Koki Takanashi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

L1o-FeNi films textured with the a-axis perpendicular to the film plane were successfully fabricated by denitriding FeNiN films. 20-nm-thick FeNiN films with two variants were epitaxially grown on SrTiO3(001), MgAl2O4(001), and MgO(001) substrates by molecular beam epitaxy. Denitriding was performed by annealing at 300 °C for 4 h under an H2 gas atmosphere. The epitaxial relationships were L10-FeNi[001](100) || substrate[l00](001) and L10-FeNi[010](l00) || substrate[100](001). The uniaxial magnetic anisotropy energy (Ku) of the L10-FeNi film was estimated to be 4.4 x 106 erg/cm3 at room temperature by magnetic torque measurement. This Ku value corresponds to a degree of long range order of 0.4.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalJournal of the Magnetics Society of Japan
Volume43
Issue number4
DOIs
Publication statusPublished - 2019

Keywords

  • Denitriding
  • FeNiN
  • L1-FeNi
  • Molecular beam epitaxy
  • Uniaxial magnetic anisotropy energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Instrumentation

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