Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect

Haruaki Saruyama, Mikihiko Oogane, Yuta Kurimoto, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe 50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

Original languageEnglish
Article number063003
JournalJapanese journal of applied physics
Issue number6 PART 1
Publication statusPublished - 2013 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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