Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect

Haruaki Saruyama; Mikihiko Oogane; Yuta Kurimoto; Hiroshi Naganuma; Yasuo Ando

doi:10.7567/JJAP.52.063003

Fabrication of L1₀-ordered MnAl films for observation of tunnel magnetoresistance effect

Haruaki Saruyama, Mikihiko Oogane, Yuta Kurimoto, Hiroshi Naganuma, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We succeeded in fabricating L1₀-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 10⁷ erg/cm³ and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L1₀-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co₅₀Fe ₅₀ layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L1₀-ordered MnAl electrode.

Original language	English
Article number	063003
Journal	Japanese journal of applied physics
Volume	52
Issue number	6 PART 1
DOIs	https://doi.org/10.7567/JJAP.52.063003
Publication status	Published - 2013 Jun

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect",

abstract = "We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe 50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.",

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AU - Saruyama, Haruaki

AU - Oogane, Mikihiko

AU - Kurimoto, Yuta

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

PY - 2013/6

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AB - We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe 50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

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