Abstract
We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe 50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.
| Original language | English |
|---|---|
| Article number | 063003 |
| Journal | Japanese journal of applied physics |
| Volume | 52 |
| Issue number | 6 PART 1 |
| DOIs | |
| Publication status | Published - 2013 Jun 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Saruyama, H., Oogane, M., Kurimoto, Y., Naganuma, H., & Ando, Y. (2013). Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect. Japanese journal of applied physics, 52(6 PART 1), [063003]. https://doi.org/10.7567/JJAP.52.063003