Fabrication of L10-ordered MnAl films for observation of tunnel magnetoresistance effect

Haruaki Saruyama, Mikihiko Oogane, Yuta Kurimoto, Hiroshi Naganuma, Yasuo Ando

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn-Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe 50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

Original languageEnglish
Article number063003
JournalJapanese journal of applied physics
Volume52
Issue number6 PART 1
DOIs
Publication statusPublished - 2013 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Fabrication of L1<sub>0</sub>-ordered MnAl films for observation of tunnel magnetoresistance effect'. Together they form a unique fingerprint.

  • Cite this